Electroluminescence Properties of a Zinc Oxide Nanorod Array Heterojunction Light-Emitting Diode
نویسندگان
چکیده
منابع مشابه
Regularly patterned nanorod light-emitting diode arrays
Regularly patterned InGaN/GaN quantum-well nanorod (NR) light-emitting diode (LED) arrays are grown with MOCVD and characterized with cathodoluminescence and transmission electron microscopy. The dependencies of their morphologies and emission behaviors on the geometry of growth pattern and MOCVD growth condition are investigated. Also, a light-emitting device consisting of such an NR LED array...
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For InGaN/GaN based nanorod devices using a top-down etching process, the optical output power is affected by non-radiative recombination due to sidewall defects (which decrease light output efficiency) and the mitigated quantum confined Stark effect (QCSE) due to strain relaxation (which increases internal quantum efficiency). Therefore, the exploration of low-temperature optical behaviors of ...
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ژورنال
عنوان ژورنال: Journal of Electronic Materials
سال: 2020
ISSN: 0361-5235,1543-186X
DOI: 10.1007/s11664-020-07955-9